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NCP1200CH/D

SO8DIP8NCP1200 SellTM / 40kHz60kHz IGBTMOSFET NCP1200 * * * * * * 110mA/ * 40kHz 60kHz * * / * * /
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SO-8 D 751
DIP-8 P 626
DIP-8 SO-8 SO-8
NCP1200P NCP1200D NCP1200DR2
50/ 98/ 2500/

(c) 2000
1
20002-0
NCP1200CH/D
1 2 3 4 5 6 7 8 Adj FB CS Gnd Drv Vcc NC HV Vcc L.E.B MOSFET 10F Vcc
HV
Q DCmax=80%

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NCP1200CH/D
VccHV 8HV6Vcc 8HV6Vcc10F TA=25C/TA= 25C+85CTJ=125CVcc=11V Vpin8=50V, fOSC=40kHz VCCON Vcc VCCOFF Vcc ICC1 6 ICC2 1nF ICC3 IC1 Vcc=VCCHMAX-100mV IC2 Vcc=0 @ CL=1nF10-90% Tr Tf @ CL=1nF10-90% ROH =0Vgate=VCCHMAX-1V ROL =11VVgate=1V 5 IIB 31V ILimit ILskip TDEL TLEB Vcc=11V51 fOSC 40kHz fOSC 60kHz Dmax Vcc=11V, 51 Rup Iratio 3 Vskip 1 6 6 6 6 6 8 8 5 5 5 5 3 3 3 3 3 -0.5 0.9 12 10 400 1.5 320 4.0 67 28 36 11 0.02 1.0 300 200 250 40 60 80 8.0 4.0 1.2 0.5 1.1 V V A mA A mA mA ns ns A V mV ns ns kHz kHz % k VCC PD RJA TA TJmax Tstg 16 100 -25+85 125 -60+150 2.0 200 450 500 V W C/W C C C kV V V V
32 48
48 72
2
1 1
V k
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NCP1200CH/D
NCP1200 / NCP1200 UC384X NCP1200 VccDSS DSSVcc / VCCVCCL VCC=12V
=12V

/ 1.10F Vcc DSS 2.1N4007 MOSFETQgMO 8 SFETMTDIN60EQg11nc 81mW V 48kHzMOSFET Fsw= Qg=MOSFET Vcc=VGS 1 VccI= Fsw 2 Qg=220A 400VDC 4mA 8ms50ms 400V*4mA*0.16=256mW 1.MOSFET

3.VccVCCH 16V
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NCP1200CH/D
NCP1200 FB 2 2a Lp=1mH Fsw=48kHz Ipskip=300mA300mV/R
1 2 L p I P FSW = 2.2W 10m 2 s100ms2.2* 0.1=220mW
FB
IPmin=300mV/Rsense
2 FB1.2V 1V/Rsense Vpin1/42b 1.2V 1
P1
P2
P3
X=5s/ P1 2b
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NCP1200CH/D
FB4. 1V NCP1200 Vcc Vcc 12V 320AICC3Vcc O6.5V Vcc 12V 3

Vcc 3 Vcc Vcc VccVcc 12V10V 12V10V 6ms 10msVcc MOSFET V C t = 1.5mA i V=2Vt10 ms8F10F 320A Vcc=10V Vcc6.5V 10F320A 109ms
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NCP1200CH/D
NCP1200
4W /6.5V CD

4 NCP1200 / T1Lp=3.5mHNpNs=1:0.066 EF15=30H 1 2 3 MTDIN60E MOSFETBVdss600VRclamp CclampDclamp MUR160 2 Vclamp (Vclamp - (Vout + Vf sec ) N ) Vclamp 40-80 Vout+Vf+ Lleak NNs:Np Fsw Vripple20 MOSFET
Vmax = I p Lleak Clump
ClumpMOSFET4 WRsnubberCsnubber1.5k 47pF
Rclamp=
Lleak I p 2 FSW
Vclamp Vripple FSW Rclamp
Cclamp =
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NCP1200CH/D
DIP8 P 626-05 K 1. L 2. 3. ANSI Y14.5M1982 A 9.40 10.16 0.370 0.400 B 6.10 6.60 0.240 0.260 C 3.94 4.45 0.155 0.175 D 0.38 0.51 0.015 0.020 F 1.02 1.78 0.040 0.070 G 2.54BSC 0.100BSC H 0.76 1.27 0.30 0.050 J 0.20 0.30 0.008 0.012 K 2.92 3.43 0.115 0.135 L 7.62BSC 0.300BSC M ----10 10 N 0.76 1.01 0.030 0.040 (SO-8) D 751-05 R 1. ASME Y14.5M1994 2. 3. DE 4. 0.15 5. B B0.127 A 1.35 1.75 A1 0.10 0.25 B 0.35 0.49 C 0.18 0.25 D 4.80 5.00 E 3.80 4.00 e 1.27BSC H 5.80 6.20 h 0.25 0.50 L 0.40 1.25 0 7
2
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NCP1200CH/D
(SCI LLC)
SCILLC SCILLC SCILLC e u e u SCI LLC SCI LLC SCILLC SCILLC SCILLC SCI LLC /
: P.O. Box 5163, Denver, Colorado 80217 : 303-675-2175 800-344-3860 / : 303-675-2176 800-344-3867 / : ONlit@hibbertco.com : 303-675-2167800-344-3810 / : 800-282-9855 / - : (+1)303-308-7140(, 1:00-5:00, ) ONlit-german@hibbertco.com : (+1)303-308-7141(, 1:00-5:00, ) ONlit-french@hibbertco.com : (+1)303-308-7142(,12:00-5:00, ) ONlit@hibbertco.com *: 00-800-4422-3781 * / 303-308-7143(8:00-5:00MST) ONlit-spanish@hibbertco.com / - : 303-675-2121(9:00-1:00) 001-800-4422-3781/ : ONlit-asia@hibbertco.com : 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, 141-0031 : 81-3-5740-2745 : r14525@onsemi.com : http://onsemi.com.cn
NCP1200CH/D

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